JOURNALS

62. Sunkyu Kim, Wonjong Lee, Zobia Irshad, Siwon Yun, Hyeji Han, Muhammad Adnan, Hyo Sik Chang, Jongchul Lim, Elucidating Interfacial Hole Extraction and Recombination Kinetics in Perovskite Thin Films, Energies 17(9), 2062 (2024). 10.3390/en17092062 

61. Minji Jeong, Jihye Park, Young Joon Cho, Hyo Sik Chang, Enhancing performance of heterojunction silicon solar cells through atomic-layer-deposited MoOx hole contact and atomic-layer-deposited AlZnO layer,  Vacuum 222,  113000 (2024). 10.1016/j.vacuum.2024.113000

60. Jiseon Hwang, Ha Kyung Park, Donghyeop Shin, Inyoung Jung, Inchan Hwang, Young-Joo Eo, Ara Cho, Joo Hyung Park, Soomin Song, Yunae Cho, Jihye Gwak, Hyo Sik Chang*, William Jo*  and Kihwan Kim*, Reforming material chemistry of CIGS solar cells via a precise Ag doping strategy, J. Mater. Chem. A 11,19546 (2023). 10.1039/D3TA03131D

59. Jihye Park, Minji Jeong, Young Joon Cho, Kyung Joong Kim, Truong Ba Tai, Hyeyoung Shin, Jong Chul Lim, Hyo Sik Chang, Investigation of tetrakis(ethylmethylamido)hafnium adsorption mechanism in initial growth of atomic layer deposited-HfO2 thin films on H-/OH-terminated Si (100) surfaces, J. Vac. Sci. Technol. B 41, 062801 (2023). 10.1116/6.0002920

58. Minji Jeong, Jihye Park, Young Joon Cho, Hyo Sik Chang, Improved passivation performance of Al2O3 interlayer/MoOX thin films continuously grown via atomic layer deposition, Thin Solid Films 766, 139667 (2023). https://doi.org/10.1016/j.tsf.2022.139667

57. Van-Hoang Vuong, S.V.N. Pammi, Swathi Ippili, Venkatraju Jella, Trinh Nguyen Thi, Kedhareswara Sairam Pasupuleti, Moon-deock kim,

Min Ji Jeong, Jong-Ryul Jeong, Hyo Sik Chang, Soon-Gil Yoon, Flexible, stable, and self-powered photodetectors embedded with chemical vapor deposited lead-free bismuth mixed halide perovskite films,Chemical Engineering Journal 458, 141473 (2023).

 https://doi.org/10.1016/j.cej.2023.141473

56. Koo Lee, Sung Bae Cho, Junsin Yi, Hyo Sik Chang, Prediction of Power Output from a Crystalline Silicon Photovoltaic Module with Repaired Cell-in-Hotspots, Electronics 11(15), 2307 (2022). https://doi.org/10.3390/electronics11152307

55. Koo Lee, Sung Bae Cho, Junsin Yi, Hyo Sik Chang, Simplified Recovery Process for Resistive Solder Bond (RSB) Hotspots Caused by Poor Soldering of Crystalline Silicon Photovoltaic Modules Using Resin, Energies 15(13), 4623 (2022). https://doi.org/10.3390/en15134623

54. YoungJoon Cho, Hyo Sik Chang, Kerfless Si Wafering Using Al Metal Paste, Epoxy and Ni Electroplating as Stress-Induced Layer, Korean Journal of Metals and Materials 60(5), 370-375 (2022). https://doi.org/10.3365/KJMM.2022.60.5.370

53. Kue-Ho Kim, Weiguang Hu, Hyo Sik Chang*, Hyo-Jin Ahn*, Binary sulfuric effect on ZnO laminated carbon nanofibers hybrid structure for ultrafast lithium storage capability, Journal of Alloys and Compounds 896, 163148 (2022). https://doi.org/10.1016/j.jallcom.2021.163148

52. Jiseon Hwang, Yunae Cho, Donghyeop Shin, Inyoung Jeong, Joo Hyung Park, Jun-Sik Cho, Jihye Gwak, Jae Ho Yun, Kyuseung Han, Hyo Sik Chang*, Kihwan Kim*, Improved carrier transport in CIGS solar cells induced by Ag treatment, J. Alloy. Comp. 886, 161193 (2021). https://doi.org/10.1016/j.jallcom.2021.161193

51. Viet Anh Cao, Minje Kim, Weiguang Hu, Sol Lee, Sukhyeong Youn, Jiwon Chang, Hyo Sik Chang, and Junghyo Nah, Enhanced Piezoelectric Output Performance of the SnS2/SnS Heterostructure Thin-Film Piezoelectric Nanogenerator Realized by Atomic Layer Deposition, ACS Nano 15, 10428 (2021). https://doi.org/10.1021/acsnano.1c02757

50. YoungJoon Cho,  Min Ji Jeong, Ji Hye Park, Weiguang Hu, Jongchul Lim, Hyo Sik Chang, Charge Transporting Materials Grown by Atomic Layer Deposition in Perovskite Solar Cells, Energies 14(4), 1156 (2021). https://doi.org/10.3390/en14041156

49. Weiguang Hu, Nguyen Duc Quang, Sutripto Majumder, Min Ji Jeong, Ji Hye Park, Young Joon Cho, Seung Bo Kim, Kyu bock Lee, Dojin Kim, Hyo Sik Chang, Three-dimensional nanoporous SnO2/CdS heterojunction for high-performance photoelectrochemical water splitting, Appl. Surf. Sci. 560, 149904 (2021). https://doi.org/10.1016/j.apsusc.2021.149904

48. Chung Geun Lee, Woo Gyun Shin, Jong Rok Lim, Gi Hwan Kang, Young Chul Ju, Hye Mi Hwang, Hyo Sik Chang, Suk Whan Ko, Analysis of electrical and thermal characteristics of PV array under mismatching conditions caused by partial shading and short circuit failure of bypass diodes, Energy 218, 119480 (2021). https://doi.org/10.1016/j.energy.2020.119480

47. Nguyen Duc Quang, Weiguang Hu, Hyo Sik Chang, Phuoc Cao Van, Duc Duong Viet, Jong-Ryul Jeong, Dong‑Bum Seo, Eui‑Tae Kim, Chunjoong Kim, Dojin Kim, Fe2O3 hierarchical tubular structure decorated with cobalt phosphide (CoP) nanoparticles for efficient photoelectrochemical water splitting, Chemical Engineering Journal 417, 129278 (2021). https://doi.org/10.1016/j.cej.2021.129278

46. Weiguang Hu, Nguyen Duc Quang, Sutripto Majumder, Eun hee Park, Do jin Kim, Ho-Suk Choi, Hyo Sik Chang, Efficient photo charge transfer of Al-doped ZnO inverse opal shells in SnS2 photoanodes prepared by atomic layer deposition, J. Alloy. Comp. 819, 153349 (2020).  https://doi.org/10.1016/j.jallcom.2019.153349

45. YoungJoon Cho, Hyo Sik Chang, Change in atomic layer deposited Al2O3 passivation characteristics by ozone concentration, Thin Solid Films 690, 137539 (2019). https://doi.org/10.1016/j.tsf.2019.137539

44. Weiguang Hu, Hien Thi Truong, Dojin Kim, Hyo Sik Chang, Enhancement in Photoelectrochemical Performance of Optimized Amorphous SnS2 Thin Film Fabricated through Atomic Layer Deposition, Nanomaterials 9, 1083 (2019). https://doi.org/10.3390/nano9081083

43. Jong Hoon Baek, Min Ji Jeong, Weiguang Hu, Hyo Sik Chang, Passivation improvement of nitric acid oxide by ozone post-treatment for tunnel oxide passivated contacts silicon solar cells, Appl. Surf. Sci. 489, 330-335 (2019). https://doi.org/10.1016/j.apsusc.2019.05.369

42. Srivathsava Surabhi, Chi Hieu Luong, Min Yi Kim, Phuoc Cao Van, Viet Dong Quoc, Rambabu Kuchi, Jae-Woong Lee, Hyo-Sik Chang, Jong-Ryul Jeong, Fill factor controlled nanoimprinted ZnO nanowires based on atomic layer deposition, Current Appl. Phys. 18, 767-773 (2018). https://doi.org/10.1016/j.cap.2018.03.006

41. Yong Hwan Lee, Hamchorom Cha, Sunho Choi, Hyo Sik Chang, Boyun Jang, Jihun Oh, Characterization of Atomic-Layer-Deposited (ALD) Al2O3-Passivated Sub-50-mu m-thick Kerf-less Si Wafers by Controlled Spalling, Elec. Matt. Lett. 14, 363-360 (2018). https://doi.org/10.1007/s13391-018-0039-9

40. Young Joon Cho, Kwun-Bum Chung, Hyo Sik Chang, Characteristics of surface passivation of ozone-and water-based Al2O3 films grown by atomic layer deposition for silicon solar cells, Thin Solid Films 649, 57-60 (2018). https://doi.org/10.1016/j.tsf.2018.01.027

39. Hamchorom Cha, Hyo Sik Chang, Passivation performance improvement of ultrathin ALD-Al2O3 film by chemical oxidation, Vacuum 149, 180-184 (2018). https://doi.org/10.1016/j.vacuum.2017.12.026

38. Young Joon Cho, Hamchorom Cha, Hyo Sik Chang, Plasma nitridation of atomic layer deposition-Al2O3 by NH3 in Plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell, Surface & Coatings Technology 307, 1096–1099 (2016). https://doi.org/10.1016/j.surfcoat.2016.05.057

37. Myeong Sang Jeong, Sung Jin Choi, Hyo Sik Chang, Jeong In Lee, Min Gu Kang, Donghwan Kim, and Hee-eun Song, Use of antireflection layers to avoid ghost plating on Ni/Cu plated crystalline silicon solar cells, Jpn. J. Appl. Lett. 55, 036502 (2016).

36. Ki-Won Seo, Min-Yi Kim, Hyo-Sik Chang, and Han-Ki Kim, Self-assembled Ag nanoparticle network passivatedby a nano-sized ZnO layer for transparent and flexible film heaters, AIP ADVANCES 5, 127132 (2015).

35. Kuk-Hyun Cho, Young Joon Cho, Kyung-Joong Kim, Hee Eun Song and Hyo Sik Chang, Effects of Plasma-enhanced Chemical Vapor Deposition (PECVD) on the Carrier Lifetime of Al2O3 Passivation Stack, Journal of the Korean Physical Society 67, 995-1000 (2015).

34. Young Joon Cho, Hee Eun Song, and Hyo Sik Chang, Relation of lifetime to surface passivation for atomic-layer-deposited Al2O3 on crystalline silicon solar cell, Materials Science and Engineering B 193, 160-163(2015). https://doi.org/10.1016/j.mseb.2014.12.004

33. Young Joon Cho,Woong-Chul Shin, and Hyo Sik Chang, Selective deposition contact patterning using atomic layer deposition for the fabrication of crystalline silicon solar cells, Thin Solids Films 568, 1(2014).https://doi.org/10.1016/j.tsf.2014.07.054

32. Bit-Na Kim, Hyeong Jun Kim, Hyo Sik Chang, Hyun Seon Hong, Sung-Soo Ryu, and Heon Lee, Characterization and Cell Performance of Al Paste with an Inorganic Binder of Bi2O3–B2O3–ZnO System in Si Solar Cells, Current Nanoscience 9 66(2013).

31. Bit-Na Kim, Hyeong Jun Kim, Hyo Sik Chang, Hyun Seon Hong, Sung-Soo Ryu, and Heon Lee, Effect of the Molar Ratio of B2O3 to Bi2O3 in Al Paste with Bi2O3–B2O3–ZnO Glasson Screen Printed Contact Formation and Si Solar Cell Performance, Jpn. J. Appl. Phys. 52 10MB22-10MB22-4 (2013).

30. Young-joon Cho, Hyo Sik Chang, ‘Enhanced Boron Gettering Effect of n-Type Solar Grade Si Wafers by In Situ Oxidation’Metals and Materials International 19, 1377-1380 (2013).

29. Young-joon Cho, Hyo Sik Chang,‘Reduction of surface reflectivity in multi-crystalline silicon solar cells by wet nano-texturing ’, Physica Status Solidi C 9 2097-2100 (2012).

28. Do-Hyung Kim,Sung-Soo Ryu,Dong wook Shin,Jung-Han Shin,Jwa-Jin Jeong,Hyeong-Jun Kim,Hyo Sik Chang,‘The fabrication of front electrodes of Si solar cell by dispensing printing’, Mat. Sci. Eng. B 177 217-222 (2012).

27. H.S. Chang, H.C. Jung 'Nearly zero reflectance of nano-pyramids and dual- antireflection coating structure for monocrystalline silicon solar cells' J. Nanosci. Nanotechnol. 11,3680-3683 (2011).

26. H.S. Chang, 'Improvement in Conversion Efficiency of Multi-crystalline Silicon Solar Cells using Efficient Hydrogen Treatment' Electrochem. Solid-State Lett. 13 B237-B239 (2010).

25. H.S. Chang, 'Effect of Passivation Process in Upgraded Metallurgical Grade (UMG)-Silicon Solar Cells' Solar Energy Materials & Solar Cells 95, 63-65(2010).

24. Hyo Sik Chang, Effects of Initial Growth Mode on the Electrical Properties of Atomic-Layer-deposited HfO2 Films, Electronic Materials Letters 5, 187-190(2009).

23. H.S. Chang and H. Hwang, 'Enhancement of Data Retention Time for 512Mb DRAMs using High Pressure Deuterium Annealing' IEEE Trans. and Elect. Dev. 55, 3599(2008).

22. K.B. Chung, C.N. Whang, H.S. Chang, D.W. Moon, and M.-H. Cho, ‘Initial nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on Si surfaces with the various surface conditions using in situ medium energy ion scattering analysis’, J. Vac. Sci. Technol. A 25, 141(2007).

21. K.B. Chung, H.S. Chang, S.H. Lee, C.N. Whang, D.-H. Ko, H. Kim, D.W. Moon, and M.-H. Cho, 'Hf-Aluminate Films With and Without an Interfacial Layer during Growth and Postannealing', Electrochem. Solid-State Lett. 8, F51 (2005).

20. S. G. Tavakoli, S. -K. Baek, H. S. Chang. D. W. Moon, H. Hwang, 'Bismuth ion-implanted solid-phase epitaxially grown shallow junction for metal-oxide-semiconductor field-effect transistors', Appl. Phys. Lett. 86, 032104 (2005).

19. H.S. Chang, H. Hwang, M.-H. Cho and D.W. Moon, 'Investigation of initial growth stage of HfO2films on Si (100) grown by atomic-layer deposition using in-situ medium energy ion scattering', Appl. Phys. Lett. 86, 031906 (2005).

18. M.-H. Cho, K.B. Jung, H. S. Chang, D.W. Moon, S. A. Park, Y.K. Kim, K. Jeong, C.N. Whang, D.W. Lee and D.-H. Ko, 'Interfacial reaction depending on the stack structure of Al2O3 and HfO2 during film growth and postannealing', Appl. Phys. Lett. 85, 4115 (2004).

17. S. Hyun, G.H. Buh, S.H. Hong, B.Y. Koo, Y.G. Shin, U.I. Jung, J.T. Moon, M.-H. Cho, H.S. Chang, D.W. Moon, 'Ultrathin gate oxide with a reduced transition layer grown by plasma-assisted oxidation', Appl. Phys. Lett. 85, 988 (2004).

16. S. G. Tavakoli, S. -K. Baek, H. S. Chang, D. W. Moon, H. Hwang, 'Antimony as a proper candidate for low temperature solid phase epitaxially activated n+/p junctions', Electrochem. Solid-State Lett. 7, G126 (2004).

15. M. -H. Cho, H. S. Chang, Y. J. Cho, D. W. Moon, K. -H. Min, R. Sinclair, S. K. Kang, D. -H. Ko, J. H. Lee, J. H. Gu, N. I. Lee, 'Investigation of the chemical state of ultrathin Hf-Al-O films during high temperature annealing', Surface Science. 554, L75 (2004).

14. M. -H. Cho, H. S. Chang, Y. J. Cho, D. W. Moon, 'Interfacial characteristics of HfO2 films grown on strained Si0.7Ge0.3 by atomic-layer deposition', Appl. Phys. Lett. 84, 1171 (2004).

13. M. -H. Cho, H. S. Chang, Y. J. Cho, D. W. Moon, K. -H. Min, R. Sinclair, S. K. Kang, D. -H. Ko, J. H. Lee, J. H. Gu, N. I. Lee, 'Change in the chemical state and thermal stability of HfO2 by incorporation of Al2O3', Appl. Phys. Lett. 84, 571 (2004).

12. H. S. Chang, S.-K. Baek, H. Park, H. Hwang, J.H. Oh, J.H. Yeo, K.H. Hwang, S.W. Nam, H.D. Lee and C.L. Song, D.W. Moon and M.-H. Cho 'Electrical and Physical Properties of HfO2 Deposited via Atomic Layer Deposition using Hf(OtBu)4 and Ozone atop Al2O3' Electrochem. Solid-State Lett. 7, F42 (2004).

11. H. S. Chang, H. Hwang, J. H. Lee and N. I. Lee, D. W. Moon and M. H. Cho ‘Thermal stability and decomposition of the HfO2-Al2O3 laminate system', Appl. Phys. Lett. 84, 28 (2004).

10. H. S. Chang, H. Hwang, H. K. Kim and D. W. Moon, 'Atomic transport and stability during annealing of HfO2 and HfAlO with an ultrathin layer of SiO2 on Si (001)', J. Vac. Sci. Technol. A 22, 162 (2004).

9. H. Sim, H. S. Chang, and H. Hwang, 'Electrical characteristics of ozone-oxidized HfO2 gate dielectrics', Jpn. J. Appl. Lett. 42, 1596 (2003).

8. H. K. Shon, H. J. Kang, T. E. Hong, H. S. Chang, K. J. Kim, H. K. Kim and D. W. Moon, `Quantitative depth profile of Nitrogen in ultrathin oxynitride film with low energy SIMS and MEIS', Appl. Surf. Sci. 203-204, 418 (2003).

7. H. Yang, H. S. Chang, and H.Hwang,`Experimental determination of ultrathin oxide thickness using conventional capacitance-voltage analysis', Jpn. J. Appl. Lett. 41, 5974 (2002).

6. S. Jeon, H. Yang, H. S. Chang, D.-G. Park and H. Hwang, `Ultrathin nitrided-nanolaminate (Al2O3/ZrO2/Al2O3) for metal-oxide-semiconductor gate dielectrics applications', J. Vac. Sci. Technol. B 20, 1143 (2002).

5. H. Yang, H. S. Chang and H. Hwang,`Improved extraction method of ultrathin oxide thickness using C-V characteristics of Metal-Oxide-Semiconductor device', Jpn. J. Appl. Lett. 41, L549 (2002).

4. H. S. Chang, S. Choi, D. W. Moon and H. Hwang, `Improved reliability characteristics of ultra-thin SiO2 grown by low temperature ozone oxidation', Jpn. J. Appl. Lett. 41, 5971 (2002).

3. H.S. Chang, H.D Yang, H. Hwang, H.M. Cho, H.J. Lee, and D.W. Moon,`Measurement of the Physical and Electrical Thickness of Ultrathin Gate Oxides', J. Vac. Sci. Technol. B 20, 1836 (2002).

2. H. S. Chang, S. Jeon, D. W. Moon and H. Hwang, `Excellent thermal stability of Al2O3/ZrO2/Al2O3stack structure for metal-oxide-semiconductor gate dielectrics application', Appl. Phys. Lett. 80, 3385 (2002).

1. H. S. Chang, S. Choi, H. Yang, K.-Y. Min, D. W. Moon, H. Lee and H. Hwang, `Effect of Si Lattice Strain on the Reliability Characteristics of Ultrathin SiO2 on a 4° tilted Wafer', Appl. Phys. Lett. 80, 386 (2002).